They are designed for audio amplifiers and drivers utilizing complementary or. Bc174 bc182 bc190 bc 546 bc107 bc147 bc 151 bc 167 bc 171a bc 317 mps 3704 2n3242, 3566 but sorry for a817 i could not find it. The characteristics and approximate specifications of 2n series discrete transistors are generally the same between different manufacturers when trying to decide which transistor you need, take into consideration the following. Bjts have 3 terminals and come in two varieties, as npn and pnp transistors. Marking of electronic components, smd codes n3, n3. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in different applications and actual performance may.
Central, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. To extend transistor, variety of transistor heat sinks, insulator kits, and heat sink compound for this purpose. Marking of electronic components, smd codes n2, n2, n2, n20, n23, n25. Guide to 2n series transistors approximate specs and characteristics. See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Toshiba transistor silicon pnp epitaxial type pct process. Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors page 1471. The characteristics and approximate specifications of 2n series discrete transistors are generally the same between different manufacturers. The 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in. Component72n2222a331 small signal switching npn transistor5pc. Power derating tc, case temperature c p d, power dissipation watts safe area curves are indicated by figure 5.
Marking of electronic components, smd codes n3, n3, n3030ls, n306ad. Try findchips pro for 2n3565 equivalent transistor. Collectoremitter voltage collectorbase voltage emitterbase voltage collector current total power dissipation. Complementary low voltage transistor stmicroelectronics. Complementary power darlington transistors stmicroelectronics. Nte electronics nte121 pnp germanium transistor for audio frequency power amplifier, to3 case, 10a collector current, 60v collectorbase voltage price. Silicon npn transistors stmicroelectronics preferred salestypes npn transistor description the 2n3439 and 2n3440 are silicon epitaxial planar npn transistors in jedec to39 metal case designed for use in consumer and industrial lineoperated applications.
Recent listings manufacturer directory get instant insight into any electronic component. To5 qualified per milprf19500391 devices 2n3019 2n3019s qualified level jan jantx jantxv jans. Pnp switching transistor 2n3906 limiting values in accordance with the absolute maximum rating system iec 4. This is a pdf format of the well known hardware pinout book, which covers various computer, electrical and electronic item pinouts. Toshiba transistor silicon npn epitaxial type 2sc2878. Get your questions answered from other customers who own this product or have experience with it. Transistor characteristics 2n numbers home page info downloads transistors 2n if you like what im doing, please consider making a donation. This used a unique electrochemical etching process during manufacture that allowed for an extremely thin germanium base layer, which in turn allowed the transistor to operate at very high frequencies 20 to 30 mhz.
Lm195lm395 ultra reliable power transistors datasheet rev. Ib 5 ma maximum ratings ta 25c characteristics symbol rating unit collectorbase voltage. It is recommended that transistors not be allowed to operate near these values, lest their lifespan be shortened. Npnpnp transistor pair in a sot666 plastic package.
Texas instruments transistor and diode databook 1st ed 1973 datasheets for diodes from 1n251 on and transistors from 2n117 on acrobat 7 pdf 34. Toshiba transistor silicon npn epitaxial type 2sc2878 for muting and switching applications high emitterbase voltage. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free. Silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case. Our preferred method of payment is via wire transfer of funds. Basic semiconductor physics, diodes, the nonlinear diode model, load line analysis, large signal diode models, offset diode model, transistors, large signal bjt model, load line analysis, small signal model and transistor amplification. Below are the operating specifications of common npn transistors note that these specifications vary according to different manufacturers. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
Datasheet catalog for electronic components integrated. Dl110d rev10 wireless semiconductor solutions rf and if device data 1722p. For transistors, we need to know the following characteristics. Transistor gain given hfe is only an approximate value. A bipolar junction transistor bipolar transistor or bjt is a type of transistor that uses both electrons and holes as charge carriers. Datasheet catalog for electronic components integrated circuit, transistor, diode, triac, and other semiconductors page 886. The bipolar junction transistor bjt, the first type of transistor to be massproduced, is a combination of two junction diodes, and is formed of either a thin layer of ptype semiconductor sandwiched between two ntype semiconductors an npn transistor, or a thin layer of ntype semiconductor sandwiched between two ptype semiconductors a. The 2n2222a331 is a common npn bipolar junction transistor bjt used for general purpose lowpower amplifying or switching applications. Diodes and transistors pdf 28p this note covers the following topics. Dl110 rev12 wireless rf, if and transmitter device data rev 12 1449p. Datasheets ap2302gn, bc807ds, bsn207, bsn20q7, bzx384b39, ddtc115tca, ddtc125tca. Silicon mos transistor, 3n128 datasheet, 3n128 circuit, 3n128 data sheet. Datasheets bc817ds, bfg520w, bzx384b43, dmn3030lss, isl9n306ad3, isl9n306ad3st, mmsz5263. Data sheet electrical engineering at new mexico tech.
Dl110d rev11wireless semiconductor solutions rf and if device data 1726p. Power bipolar transistor, 80v vbrceo, 1element, npn, silicon, to204aa, metal, 2 pin, to3, 2 pin semiconductor technology inc 2n6277 vs 2n6283. Transistor pin outs for low to medium power type transistors viewed from below. N stands for ntype material and p stands for ptype material. High gainbandwidth product charac teristic provides excellent performance in a variety of small signal and linear amplifier applications, 1a a r b a style 1 d0 2 1003. If your question requires design or troubleshooting information, please email email protected for a prompt reply.
Nte electronics nte128 npn silicon complementary transistor. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between two other terminals, making the device. The breakdown voltage is where the transistor will stop operating or be destroyed if it is given an input voltage of that amount. Hfe has minimum and maximum values, though both may not be listed. Npn silicon high speed switching transistors, 2n30 datasheet, 2n30 circuit, 2n30 data sheet. To extend transistor, variety of transistor heat sinks, insulator kits, and. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current. Marking of electronic components, smd codes n2, n2, n2. Performance is based on target specifications, simulated results, andor prototype measurements.
C1815 and a817 transistor equivalent please electronics. Uln2803a darlington transistor arrays datasheet rev. It is defined as a gain because a small signal at the base produces a much larger signal at the collector. Npn 100ma 50v digital transistors bias resistor builtin transistors. Darlington pairs that feature highvoltage outputs with commoncathode clamp diodes for. Home page info downloads transistors 2n if you like what im doing, please consider making a donation. Nte electronics nte128 npn silicon complementary transistor for audio output, video, driver, to39 case, 1a continuous collector current, 140v collectorbase voltage price. Bc177bc177b series low power bipolar transistors page 2 210406 v1. Semiconductor transistor, diode, ic cross reference.
Etc, alldatasheet, datasheet, datasheet search site for electronic components and. Data sheets contain information regarding a product macom technology solutions is considering for development. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. Toshiba power transistor semiconductor data book 1983. Information soldering in smd technology, product information sipmos smallsignal transistors ordering code, 18008887730, fax 908 6322830 title tuner semiconductor devices, data book transistors for amplifier and switching applications. Unipolar transistors, such as fieldeffect transistors, use only one kind of charge carrier. Ck705 diode e1110 me1120 te1088 ecg semiconductor replacement guide cs1237 1n733a 1n942 delco dtg110b transistor text. Toshiba power transistor semiconductor data book 1983 toshiba corporation 1983 acrobat 7 pdf 52. Philco was an early manufacturer of transistors, starting in 195354, with the famous surface barrier type sbt. Dl110d rev9 wireless semiconductor solutions device data vol. Bipolar junction transistors bjt and fieldeffect transistorsfet. These epitaxial planar transistors are mounted in the sot32 plastic package. Transistors peter mathys ecen 1400 transistor families there are two major families of transistors. Ltd 1 qwr205004,a silicon pnp transistors the utc 2n2955 is a silicon pnp transistor in to3 metal case.
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